Microstructural evolution and dielectric properties of 1D AlN powders synthesized by microwave technique

Abstract

Low temperature synthesis of Aluminum nitride (AlN) powders through NH4Cl assisted nitridation have been studied by microwave technique. The effect of processing time on the synthesis of AlN powders has been investigated. The optimum processing time was determined to be 120min at 630W, 200°C. The powders were characterized by X-ray diffraction method (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray analyzer (EDS), Fourier transform infrared spectrometer (FTIR) and Impedance analyzer. XRD results revealed that the product has wurtzite phase of AlN. SEM micrographs show a 1D nanorod of AlN with a granular morphology. FTIR spectra exhibit A1 (TO) and E1 (LO) modes of wurtzite AlN. Dielectric properties of the powders were investigated by means of C–V and C–f and ε′–f characteristics. The reported results indicate a reasonable quality of the obtained AlN powders with high dielectric constant, suitable for application in the fabrication of specific electronic devices.