Abstract
Wide range of porosity in 30–90 vol % could be created into silicon carbide by employing carefully selected manufacturing methods. Two fabrication methods have been proposed and reviewed in the present paper: (1) partial sintering of submicrometer-sized silicon carbide particle with a suitable amount of sintering additive, acting as an inhibition of grain growth during sintering; (2) the use of ice crystals, as sacrificial pore formers, formed by freezing a silicon carbide particle dispersed gel body, leading to highly porous silicon carbide after sublimating ice crystals by vacuum drying and subsequently sintering. Depending on the processing route adopted, average pore size could be modulated in the range from 0.03 to 0.70 µm and 30 to 150 µm by partial sintering and gelation freezing, respectively. All fabrication methods proposed are simple, economical and versatile to produce macroporous body with tailored pore architecture and engineering porosity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
