Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer

Abstract

Cupric oxide (CuO) is synthesized by simple chemical bath deposition method and deposited on n-type InP substrate using e-beam evaporation technique. First, the structural and chemical compositional analysis of CuO/n-InP are analysed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD and XPS results confirmed that the formation of CuO on n-type InP substrate. Then, Au/CuO/n-InP heterojunction is fabricated with a CuO interlayer and correlated its results with the Au/n-InP Schottky junction (SJ). The barrier height (Φb) and ideality factor (n) are extracted through I-V and C-V methods and the respective values are 0.66 eV (I-V)/0.80 eV (C-V) and 1.24, and 0.78 eV (I-V)/0.94 eV (C-V) and 1.62 for the SJ and HJ diodes, respectively. By applying Cheung's and Norde functions, the Φb, ideality factor and series resistance (RS) are derived for the SJ and HJ diodes. The derived interface state density (NSS) of HJ is lower than the SJ; results demonstrated that the CuO interlayer plays an important role in the decreased NSS. The Poole-Frenkel emission is the dominant current conduction mechanism in reverse bias of both SJ and HJ diodes.