Abstract
Electroconductive Si 3N 4–TiN composites from Si and TiN powders have been fabricated by in situ reaction-bonding and post-sintering under N 2 atomosphere. The values of fracture strength and electrical resistivity in the Si 3N 4–50 wt.% TiN composite were 531 MPa and 2.5×10 −2 Ω cm, respectively. The dispersion of TiN particles inhibited the abnormal growth of rod-like Si 3N 4 grains with large size in diameter. An amorphous phase observed in most grain boundaries and triple points is attributed to liquid phase sintering. Many dislocations formed by the difference of thermal expansion coefficients were observed in Si 3N 4 and TiN grains.
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