Abstract

This study aims to understand the microstructural behavior of nitriding compound layer and its effect on Nb-carbonitride growth produced by the thermo-reactive diffusion (TRD) process. Gas nitriding was performed at 550 °C for 3 and 6 h, followed by TRD at 900 °C for 6 h. The nitriding compound layers had thicknesses of 10 and 16 μm for nitriding time of 3 and 6 h, respectively. The corresponding Nb-carbonitride layers produced by TRD were 7.2 and 11.2 μm thick, respectively. Reheating at 900 °C transformed the microstructure of the nitriding compounds to Fe3O4 and FeN0.0939. As reheating proceeded to 30 min, high concentration of nitrogen, initially existing in the nitride layer diffused to 80–90 μm into the substrate. Therefore, the TRD process produced NbN layer at the interfacial area due to intensively dissolved nitrogen from FeN0.0939. As the TRD proceeded, supply of C atoms from the base metal became competitive with the N diffusion. Thus, the TRD coating layer was grown to above the interface. Reheating at 900 °C for the 16-μm-thick nitride layer resulted in a nitrogen content ∼0.4 at% higher than that for the 10-μm-thick nitride layer, thereby producing a thicker Nb-carbonitride layer.

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