Abstract
Abstract In this paper, Silver nanoparticle assisted vertically aligned β-Ga2O3 nanowires (Ag NP-β-Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of β-Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40–50 nm) of NW growth for Ag NP-β-Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-β-Ga2O3 NW structure. Lastly, the optical absorption spectra of β-Ga2O3 NW and Ag NP-β-Ga2O3 NW reveals that the presence of Ag NP in β-Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to β-Ga2O3 NW due to the synergistic action of Ag NP and β-Ga2O3 NW. This study demonstrates that high-quality Ag NP-β-Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.
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