Abstract
Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on aZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine(C6H12N4), zinc nitratehexahydrate (Zn(NO3)2·6H2O), andgallium nitrate hydrate (Ga(NO3)3·xH2O). The microstructure characteristics and optical properties of the nanorod arrays wereanalyzed using different characterization techniques including field-emission scanningelectron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), andphotoluminescence (PL). The experimental results show that the morphology,density, and surface compositions of ZnO nanorod arrays are sensitive to theconcentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorodarrays show three different emissions, including UV (ultraviolet), yellow, andNIR (near infrared) emissions. With the increase in the Ga doping level, theluminescence quality of ZnO nanorods has been improved. The peak of UV emissionhas a small redshift, which can be ascribed to the combined effect of size andGa doping. Furthermore, Ga doping has caused defects that respond to NIRemission.
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