Abstract
Tl/sub 2/Ba/sub 2/Ca/sub 1/Cu/sub 2/O/sub x/ thin films on LaAlO/sub 3/ with excellent alignment suitable for the fabrication of passive microwave devices operating at 77 K are fabricated using an ex-situ anneal step in argon atmospheres at temperatures of 720-740/spl deg/C. In order to understand the factors influencing their microwave and transport properties, the microstructure and compositions of the films have been examined by TEM, HREM and SEM and correlated with R/sub s/ measurements obtained by the partial-end-wall-replacement technique.
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