Abstract

Transient liquid phase bonding (TLPB) is a promising technology for three-dimensional integration of circuits (3D IC), but it can be slow and less productive. A novel Cu-Sn nanocomposite interlayer (Cu-Sn NI) composed of Sn matrix with an embedded Cu nanowire array prepared by electrodeposition can significantly accelerate the bonding process, approximately by 20 times. Bonding time with a Cu-Sn NI can be as short as ~2 min to achieve a full Cu-Sn intermetallic compound (IMC) joints, whereas it can take ~60 min with a pure Sn interlayer of the same thickness under the same bonding conditions (250 °C). Unlike the columnar Cu 6 Sn 5 grains commonly formed with Sn interlayer, refined equiaxed Cu 6 Sn 5 grains with an average size of ~1.6 µm are found to be formed with Cu-Sn NI. Such grain refinement has significantly contributed to the improvement of shear strength of IMC joints formed with Cu-Sn NI (23.1 ± 3.3 MPa), higher than those bonded with pure Sn interlayer (17.9 ± 2.1 MPa). The underlying mechanisms of the new TLPB process and the formation of finer microstructure when bonding with Cu-Sn NIs are also illuminated and validated based on the experimental observation. • A unique Cu-Sn nanocomposite interlayer with Cu nanowire array embedded in Sn. • TLPB with this layer is >20 times faster than conventional Cu-Sn TLPB. • IMC joint bonded with this layer possesses refined equiaxed Cu 6 Sn 5 grains. • Strength of IMC joint bonded with this layer is higher than pure Sn layer. • Clarified the growth mechanisms of IMC in the joints bonded with this layer.

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