Abstract
Varistors in the new system ZnO-Bi2O3-SiO2 were prepared through conventional ceramic processing route. The effect of sintering temperature and time (0·5 h to 2 h between 1000° and 1250°C) on the microstructure and current/voltage characteristics of the varistors of the new system were investigated and the results were compared with those of ZnO-Bi2O3 system varistors prepared. An increase in nonlinear coefficient (α) value was observed in the SiO2 added varistors. The microstructure and the phase of the varistors were examined by means of SEM and XRD. The Zn2SiO4 spinel phase was found to be present in the intergranular region. The grain growth exponent was determined to be 2·5±0·2 and the activation energy for the ZnO grain growth was estimated to be 251±11 kJ/mol. These values were compared with those estimated for ZnO-Bi2O3 system varistors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
