Abstract
Recent advances in epitaxial oxide deposition have enabled the fabrication of thick films of ferroelectric perovskite ${\mathrm{BaTiO}}_{3}$ capable of providing a robust electro-optic response via the Pockels effect in silicon photonic devices. We report a microstructure analysis of such films integrated on Si(001) by molecular beam epitaxy, showing how the crystallographic and polarization orientation change as a function of thickness. The measured electro-optic properties of the film correlate well with the microstructural analysis and demonstrate the potential of Si-integrated ${\mathrm{BaTiO}}_{3}$ for silicon photonics. An effective Pockels coefficient of up to 268 pm/V has been demonstrated in 110-nm-thick films in transmission measurements and 352 pm/V in waveguide measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
