Abstract
Fe1-xOsxSi2 is a novel semiconducting opto-electronic material designed by energy-band engineering. This material has potential application in the Silicon-based light emitting device and thin film photovoltaic devices. In this work, novel Fe1-xOsxSi2 thin films were fabricated by magnetic sputtering deposition. The microstructures were studied by X-ray diffraction and transmission electron microscopy, and compared with FeSi2 and OsSi2 thin films. The atomic ratios between Fe and Os were determined by energy dispersion X-ray spectrometry. Optical absorption was measured to study the band gap properties. Experimental results show that all the Fe1-xOsxSi2 films have direct band gap property. The strongest optical absorption was obtained when x is equal to 0.5 and the results are valuable for the practical applications.
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