Abstract
The measurement of transient photocurrents in amorphous semiconductors has been shown in recent years to be a powerful probe of carrier thermalization within the manifold of localized states adjacent to the band edges. Here we discuss recent measurements of transient photocurrents in a-Se made using high-speed stripline techniques in order to observe thermalization within shallow band-tail states. The initial photocurrent decay is power-law like however a sharp change in the slope occurs at 11 nsec at 295K and 22 nsec at 270K. These results provide the first direct evidence for prominent structure superimposed upon the disorder-induced band-tail in a-Se.
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