Abstract
The design, simulation and measurements of microstrip slow-wave lines implemented in a 0.25 µm SiGe bipolar CMOS (BiCMOS) process is addressed for Ku-band (10–15 GHz) applications. The simulation results and the measurements show better performances for the proposed microstrip slow-wave line compared with the classical microstrip transmission line. These lines present very low insertion losses and a high phase constant.
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