Abstract
Quasi-one-dimensional NbSe 4I 0.33 single crystals with tetragonal symmetry were grown by chemical vapour transport utilizing the temperature difference of 730–670°C. On the c-planes of the crystals microstep lines were abundantly present and were observed directly in an interference contrast microscope. Steps of two different heights, either 32 ± 2 Å or 16 ± 1 Å, were found to contribute to the growth of the crystals. The regular arrangement of the microstep lines generated at spiral dislocations or at crystal edges reveals that the crystal grows by a lateral growth process on vicinal faces. At the centre of the spiral patterns an anomalous structure with a rise or a pit was often observed. A tentative explanation for these particular spiral step centres is given.
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