Microspectrophotometric studies of optical waveguide in silicon wafer with buried oxide layer

Abstract

Structures obtained using high-energy ion implantation into silicon are the novel object for optical diagnostics'. Implanted layers are characterized by significant spatial blur of optical transitions, contrary to the traditional sharp filmsubstrate interfaces. When oxygen ions are implanted at 1 MeV into monociystalline silicon, the projected range equals to R1.2 tm and the half width of depth profile of oxygen concentration is equal approximately to LR=O.2 m.2 Optical properties of this structure may be significantly different depended on the wavelength ? of sounding light. An approximation of sharp interface AR, ?Jn is true (here n is the refractive index of silicon). Experimental result on light reflection from this structure in the visible and MR ranges can not be predicted beforehand. On the other hand, it may be expected that the substantial gradient of refractive index is similar to sharp reflecting interface, especially with increasing incidence angle. The basic problem for optical diagnostics of the implanted structures is to determine the depth profile of refractive index. Such experimental determination is required for the synthesis of planar optical waveguides using ion implantation. Some preliminary results relating to the formation of the physical concept of interaction oflight with implanted structures are presented in this paper.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.