Abstract
Silicon carbide layers grown by C60 deposition on silicon (100) substrates at temperatures between 700°C and 870°C were investigated by optical microscopy (OM) as well as by scanning and transmission electron microscopy (SEM and TEM). The formation of extended cavities in the substrate surfaces, below the growing SiC layers, was observed. These cavities start to develop at the very beginning of SiC nucleation. The SiC layers bridging the cavities consist of columnar grains and contain open channels in between the grains. The epitaxial-oriented cubic fractions in the SiC layers increase with the elevation of the substrate temperature applied during C60 deposition.
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