Abstract
Microscopic mechanisms are clarified for Raman scattering of collective modes, i.e., amplitude and phase modes in the charge density wave (CDW) state of transition metal dichalcogenides. We study three phonon process in triple CDW state and effects of partial destruction of the Fermi surface due to the phase transition. It has then been understood how both phase and amplitude modes are given Raman activity and how A-E splittings of both modes and the commensurability pinning of the phase mode are related to the three phonon process. We can also explain change of Raman intensity of the originally Raman active A 1g phonon mode at phase transition as interference between paramagnetic and diamagnetic contributions for 2HTaSe 2 as well as other materials.
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