Abstract
Dephasing, i.e. the decay of the optical interband polarization in a semiconductor results from destructive interference effects between different microscopic contributions. For a system without any disorder it is shown that the many-body Coulomb correlations lead to excitation-induced dephasing which becomes increasingly important at elevated excitation levels. The effect of disorder-induced dephasing is analyzed for low excitation levels, where the combined influence of excitonic, biexcitonic, and disorder scattering contributions lead to a temporal decay of the four-wave-mixing signal.
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