Abstract
A microscopic description based on the density matrix formalism is developed to describe the dynamics of photoemission of hot electrons at semiconductor surfaces, including the interaction of bulk and surface states. The equations of motion for the electronic occupations and transitions include the interaction with arbitrary optical fields as well as the electron-phonon coupling. Model wave functions are used to qualitatively describe the bulk-surface dynamics and the subsequent time resolved two-photon photoemission s2PPEd spectra. Our results suggest that it is possible to extract energetic and temporal information of the underlying dynamical occupations of the intermediate states from the 2PPE spectra.
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