Abstract
Metal-induced lateral crystallization (MILC) in amorphous SiGe films on insulating substrates is an important technique for future thin-film-transistor fabrication. Growth features of low and/or high temperature MILC have been investigated based on the microscopic crystal observation. In the initial stage of MILC, precipitation of hemispherical Ni(Si,Ge) with orthorhombic structure is found at the growth front. This leads to the formation of long needlelike SiGe crystallites. And then, the spontaneous nucleation and growth of SiGe take place around the needlelike crystals, resulting in long rod-shaped SiGe crystals. In this way, the role of Ge atoms on MILC is clarified.
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