Abstract
We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices.
Highlights
Thin films of MoS2 have emerged as a promising platform for transparent flexible electronics
We systematically study 1/f noise measurement in MoS2 devices at high vacuum (∼ 2 × 10−6 mbar) where the effect of atmospheric water vapour is minimal
In order to find the effect of lithographic contaminations and residual water vapour, we fabricate MoS2 devices protected with hexagonal boron nitride
Summary
Thin films of MoS2 have emerged as a promising platform for transparent flexible electronics. Comparison of 1/f noise measurement in protected and unprotected devices before and after annealing indicate that the lithographic polymer, and residual water vapour play a minimal role whereas the transparency of contacts significantly affects the total magnitude of noise in these devices.
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