Abstract
ErO 6 complexes, where every Er3+ ion is surrounded by six oxygen atoms forming an octahedron with C3v point symmetry, are found to best describe the strong Stark splitting of the characteristic Er3+ emission in the 1460–1610 nm range. An a-Si:H matrix serves as an ideal semiconductor host to permit codoped O atoms to form an optimal octahedral ligand field around the Er3+ ions. The observation of sharp intense Stark peaks for temperatures between 153 and 300 °C and of strong enhancement of the Er3+ emission after 350 °C annealing can be understood first by diffusion and then outdiffusion of weakly bound hydrogen atoms in the a-Si matrix.
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