Abstract
This paper summarizes a consistent microscopic approach that allows for predictive calculations of laser gain/absorption, photoluminescence, and the intrinsic laser loss processes. The theory is first evaluated for an (AlGaIn)As quantum well system used in a vertical-external-cavity surface-emitting laser structure. Good agreement with experimental results is demonstrated. In a second application, the microscopic approach is used to predict the optical properties of novel dilute bismide containing GaAs-based quantum well gain media. Modeling the bismuth-induced band structure modifications by a valence band anticrossing model, the material gain, radiative, and Auger losses are computed.
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