Abstract
Conductive filaments formed in Pt/NiO/Pt resistive switching (RS) cells were characterized by conductive atomic force microscopy (C-AFM) and cross-sectional transmission electron microscopy (XTEM) after the removal of top electrodes. The area and current of the filaments were directly detected by C-AFM. By examining various RS cells with different cell resistances in the low-resistance state (RLRS), it has been revealed that the RLRS variation in the range of 10–220 Ω is mainly caused by the variations in the area and shape of the filaments. XTEM was carried out on a filament that dominantly determines RLRS. The area of the filament significantly varied along the thickness direction of a NiO film, which was consistent with the speculation from C-AFM analysis. Furthermore, the filaments observed in this study consist of reduced NiO with an inclusion of platinum, the electrode material, owing to Joule heating by the current during forming.
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