Abstract
The gain/absorption properties of III–V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures.
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