Abstract
SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich region on the SiC side of the interface, which was reported by Zheleva et al.
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