Abstract
The microscopic charge transport and recombination processes behind the widely concerned photoelectric hysteresis in the perovskite solar cell have been investigated with both in situ transient photovoltage/photocurrent measurements and the semiconductor device simulation. Time-dependent behaviors of intensity and direction of the photocurrent and photovoltage are observed under the steady-state bias voltages and open-circuit conditions. These charge processes reveal the electric properties of the cell, demonstrating evolutions of both strength and direction of the internal electric field during the hysteresis. Further calculation indicates that this behavior is mainly attributed to both the interfacial doping and defect effects induced by the ion accumulation, which may be the origins for the general hysteresis in this cell.
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