Abstract
The annealing of implantation damage in diamond after heavy-ion implantation of 111In at 295 K and the lattice location of the implanted ions have been investigated using emission channeling (EC) and the perturbed γγ angular correlation technique (PAC). These techniques supply information on the lattice site occupied by the implanted atom and about defects present near the implanted dopant. After annealing at 1473 K more than 60% of the ions occupy substitutional lattice sites but a large variety of defects is still present in the next neighborhood of the probe atom. An annealing stage is observed above 1000 K.
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