Abstract
Noise spectra in InAlAs/InGaAs‐based submicron self‐switching diodes are analyzed by means of the Monte Carlo technique. Shot‐noise (at low bias) and thermal noise in the series resistance (at high bias) are found to dominate the current noise at low‐frequency. Two peaks of different origin, which may limit the device performance, are found in the noise spectra at higher frequencies. The dependence of the amplitude and frequency of these peaks on the topology of the diodes is analyzed and discussed.
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