Abstract
Reflectance measurements using microscope-spectrophotometry have been undertaken to determine the origin of the colour rings on SIMOX wafers. When these measurements are correlated with the results from cross sectional transmission electron microscopy (XTEM) and secondary ion mass spectrometry (SIMS) it is found that normal incidence reflectance is extremely sensitive and closely related to changes m the microstmcture of the specimen. In addition, the increasing transparency of silicon to visible light, with increasing wavelength, means that the structure can be effectively probed to different depths, simply by changing the wavelength. These data have been used to establish optical models which enable the computed data to be fitted with the experimental measurements, and vice versa. Thus the microstructure of a SIMOX specimen may be predicted simply from the dispersion of its reflectance. As this is a fast and contactless technique it has potential applications for the nondestructive testing and mapping of SIMOX substrates.
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