Abstract

Because of profound applications of MoS2 crystals in electronics, their microscale oxidation is the subject of substantial interest. We report on oxidation of single MoS2 crystals, which were oxidized within a precision muffle furnace at a series of increasing temperatures up to 500 °C. Using electron dispersion X-ray spectroscopy (EDS) at ambient conditions, we observed an increase of oxide content with increasing heating temperature and obtained an apparent activation energy for the oxidation process of the order of 1 kcal/mol. This value is at least 8 times smaller than an activation energy for surface formation of MoO3 and according to the literature points rather to physisorbed oxygen species. Our Auger electron spectroscopy (AES) results also pointed out toward the physisorbed oxygen, similarly as our further heating studies within elevated relative humidity conditions. The Mo oxide leftovers on the sample were investigated using atomic force microscopy (AFM) and showed dendritic structures. Surface...

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