Abstract
The effect of excessive thinning of the field oxide (dishing), observed in the planarization process by chemical mechanical polishing (CMP) of glass‐filled isolation trenches, if reported for isolation spaces below 10 μm for the first time. For spaces in the range of 1.0 to 10 μm the amount of dishing was determined as 44 ± 6 nm and was independent of CMP process parameters. Suggested mechanism for this kind of dishing implies removal of hydroxylated oxide surface in field regions by a noncontact hydrodynamic process when direct wafer‐to‐pad contact occurs with nitride surface in active regions only. The addition of reactive ion etching step after a shorter CMP step is shown to provide better planarity with no dishing and is suggested as an alternative to the CMP‐only process.
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