Abstract
Silicon-based electro-optic modulator is a key device that used to implement optical interconnections. The paper is attempt to analyze the Silicon-on-insulator (SOI ) structure characteristics of resonator, according to the transfer function. The spectra response of Single Micro-Ring (SMR) and Double Micro-Ring resonators (DMR) with a ridge cross section on silicon was discussed emphatically. The 3dB bandwidth and the coupling coefficient affection on it were calculated and compared. The relationship between the characteristics of resonators the coupling coefficient was analyzed. The commercial software Rsoft was used to simulate the figures of SMR and DMR respectively. The simulation results show that the 3dB bandwidth of DMR can be achieved much narrower than that of SMR through the optimization design of the structural parameters. And the filter response line is sheerer for the DMR.
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