Microregional electrical analysis of multilayer ceramic capacitors with BaTiO3-based dielectric material

Abstract

A microregional analysis technique is newly developed to evaluate the mechanism of resistance degradation of dielectric materials during the highly accelerated lifetime test. The Schottky-type current through grains is revealed to predominantly contribute to the total leakage current. The leakage currents on dielectric layer of various thicknesses showed strong dependence on the number of grain boundaries in positively biased region. They are controlled by revere biased Schottky contact between the dielectric material and the probe of measurement system in negatively biased region, on the other hand. These results imply that the leakage current behaviors along with the applied voltage are originated by the electrical behaviors of the double Schottky barriers formed around the grain boundaries.