Abstract

State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

Highlights

  • Compound semiconductors play an important role for generating, emitting and manipulating energy

  • chemical bath deposition (CBD) is an attractive technique owing to its low temperature, low cost and large area deposition capability [4,5]

  • Microreactor-assisted nanomaterial deposition (MAND) processes can overcome some of the limitations of conventional batch processes and lead to large-scale manufacturing of uniform nanomaterials and nanostructured thin films [6,7,8,9]

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Summary

Introduction

Compound semiconductors play an important role for generating, emitting and manipulating energy. The presence of only (111) and (222) peaks indicates the highly oriented nature of CdS films deposited by MASD, which must grow as successive alternative planes composed of only either Cd or S atoms parallel to the substrate surface, as this corresponds to the (111) planes of the cubic crystalline structure This type of growth is in good agreement with the molecular-level growth mechanism. When a 70-s residence time was used, the growth rate decreased These results clearly demonstrate the capability of MASD to control the reaction kinetics of chemical solution deposition beyond the batch process. The combination of MASD with these innovative approaches should result in achieving an optimum film quality, growth rate and precursor by controlling the reacting chemical flux, the bath-to-surface volume and reaction temperatures

Scale-Up of MASD Processes
Conclusions and Future Directions
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