Abstract
Si(001)2×1 domain conversion induced by a sample current and its effect on Si MBE growth are studied using microprobe reflection high-energy electron diffraction. Samples are heated by using both a direct current and a radiative heater. It is found that diffusion anisotropy of Si adatoms and the electric force acting on positively charged adatoms cause the domain conversion. Minor 2 × 1 domain terraces always spread by a long-range repulsive interaction between atomic steps when the sample is heated radiatively. The domain conversion phenomenon and the repulsive interaction cause biatomic step flow growth during MBE growth. Atom migration induced by the sample current promotes Si MBE growth.
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