Abstract
Si and GaAs avalanche diodes containing microplasmas are investigated.Microwave fleld applied to the diode in addition to reverse dc bias results inconsiderable spread of noise spectrum and in the increase of noise power. Themicroplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh(300 to 1000 MHz) frequency bands, while the efiective noise temperature isabout 10
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