Abstract
Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas for a fixed voltage all correlate with the density of critical extended defects, the luminous flux, and the uniformity of current flow, and are determined by the type of substrate (Si, SiC, Al2O3).
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