Abstract
AbstractWe provide a brief review of our recent experimental observations, theoretical and computer models aimed at describing the interaction and transformations of micropipes – dislocated cylindrical pores – in growing bulk crystals of silicon carbide. We describe theoretically the interactions of micropipes with each other as well as with the free surface of the growing crystal. As a result, we explain the experimental observations of ramifying micropipes and calculate the conditions for micropipe split and possible further overgrowth. We also provide the results of our computer simulation of the evolution of a random ensemble of micropipes in the course of the growth of bulk SiC crystals. The simulation has confirmed the presence of both planar and twisted configuration of micropipes observed by means of synchrotron radiation X‐ray phase sensitive radiography. Finally, we consider the elastic interaction of micropipes with inclusions of minority polytypes in SiC bulk crystals. We demonstrate that micropipes are attracted to the minority polytype boundaries and can form pores that grow along these boundaries. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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