Abstract
Microphotoluminescence studies of annealed In(x)Ga(1 − x)N(y)As(1 − y)/GaAs quantum wells fabricated by molecular beam epitaxy for optical emission in the 1.3 µm spectral range revealed several sharp peaks about 2–7 meV wide in the emission spectra. The intensity of the discrete lines decreased strongly with increasing lattice temperature and was absent in as-grown (unannealed) quantum wells. Such quantum dot-like emission lines are attributed to the recombination of excitons strongly localized at alloy fluctuations composed of In–N-rich clusters.
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