Micro-/Nanointegrated Fabrication Technique for Silicon

Abstract

Silicon is one of the most important materials for the development of electronics science and technology, which is the footstone of integrated circuits (IC), electronic communication systems, solar cells, micro-electro-mechanical systems (MEMS), etc. Since the 60s and 70s in the last century, the high-precision fabrication technology based on silicon has been developed rapidly. In the past five decades, Si-based microfabrication technology was developed from two aspects, including bulk processes and surface processes, which has already become a mature technical field. More importantly, bulk processes realize the dream of fabricating 3-D structures at the microscale level. Among all of the bulk processes, deep etching process is one of the most important techniques. Deep reactive-ion etching (DRIE) process is an essential deep etching process, and high-aspect-ratio structures are fabricated by using the alternation of etching steps and passivation steps. DRIE process was also called Bosch process due to the first developer of Bosch company. This chapter presents a micro-/nanointegrated fabrication technique for silicon based on an improved DRIE process, and several Si-based samples with attractive properties are demonstrated.