Abstract
This paper reports a novel micro/nano fabrication method for mass production of low-stressed silicon nitride (SiN) membrane nanopores with the precisely size-controlled 30nm in diameter using an anisotropic reactive ion etching (ARIE) and nano-imprinting method, while maintaining compatibility with CMOS IC processes. Our method differs from that of Striemer group [1] in the specific membrane material, and Hien group [2] in the specific fabrication protocols. Micromachining protocols facilitate the accomplishing nanostructures to be used for separation of collections of particles. However, membrane fragility and complex fabrication prevents the use of ultrathin membranes for molecular separations. Here, we report a novel, simple and robust micro/nano fabrication method of strong SiN nanosieve membrane with the small, precise, and uniform nano-sized pore structures with a diameter of 30nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
