Abstract
One micron thick Gd2O3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane textures. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance–voltage (C–V) characteristics show that the Gd2O3 device results in a negative threshold shift of approximately 1.9V. Hysteresis of 0.9V was extracted from the C–V curve corresponding to a trapped charge density of 6.9×1010cm−2. The conduction mechanisms were found to be dominated by Poole–Frenkel conduction between 50 and 100°C and Schottky emission between 125 and 200°C. The trap height for Poole–Frenkel conduction was 0.46eV and the Schottky barrier height was 0.79eV.
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