Abstract
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot’s orbitals. Operation speed and gate fidelity are related to device parameters. Sub-100-ns π pulse duration can be achieved with lattice fluctuation coherence time of 4ms for GaAs.
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