Abstract
Micromagnetic simulation was used to investigate the effects of edge damage in a perpendicular magnetic tunnel junction (MTJ) on thermal stability factor ( $\Delta$ ) and spin transfer torque switching behavior at 300 K. A significant decrease in $\Delta $ was observed in smaller MTJs with severe anisotropy field ( $H_{k}$ )-degradation of the damaged region. It was found that $H_{k}$ degradation has a crucial influence on reference layer magnetization, causing “back hopping.” The probability of back hopping is higher for AP to P switching and increases with increasing $H_{k}$ degradation. This back hopping can be suppressed by using a more stable reference layer or reducing the edge damage. In addition, it was shown that if saturation magnetization ( $M_{s}$ ) at edge-damaged region decreased, no back hopping was observed.
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