Abstract
We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. For the material used in free layers, we use two different Cobalt-based Heusler alloys and compare their performance on the basis of switching speed, thermal stability and Tunnel magnetoresistance. We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability.
Highlights
Spin transfer torque (STT)-based magnetoresistive random access memory (MRAM) is emerging as a promising memory technology for the generation due to its scalability, high operation speed and unlimited endurance [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16]
We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations
We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability
Summary
Spin transfer torque (STT)-based magnetoresistive random access memory (MRAM) is emerging as a promising memory technology for the generation due to its scalability, high operation speed and unlimited endurance [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16]. The reason for the ferromagnetism in these alloys is the double-exchange mechanism between neighboring magnetic ions They are characterized by rich electronic and magnetic properties such as shape memory and half metallic behavior [19]. We use Co2MnSi (CMS) and Co2FeAl0.4Si0.6 (CFAS) as the material in the free layer for the MTJ stack used in [20] with perpendicular anisotropy. Both these Heusler alloys have low Ms and a values and are expected to show faster switching. We compare the TMRs of the structures using most general model proposed by Julliere
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