Abstract
We investigate spin transfer torque switching in an in-plane double-barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. We consider a magnetic tunnel junction with two rigid fixed layers having antiparallel magnetization and a composite-free layer with two coupled ferromagnetic layers. We compare switching properties of the in-plane MTJ with perpendicular anisotropy MTJ. The dependence of switching time on the thicknesses of free layer and spacer and coupling strength is also explored.
Highlights
Spin transfer torque (STT)-based magnetoresistive random access memory (MRAM) has shown enormous promise among the generation of non-volatile memories due to its scalability, high operation speed and unlimited endurance (Slonczewski 1996; Berger 1978, 1996; Tsoi et al 1998; Myers et al 1999; Kiselev et al 2003; Tserkovnyak et al 2005; Albert et al 2000)
We investigate spin transfer torque switching in an in-plane double-barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations
STT-MRAM cell normally consists of an MTJ and a transistor as access device
Summary
Spin transfer torque (STT)-based magnetoresistive random access memory (MRAM) has shown enormous promise among the generation of non-volatile memories due to its scalability, high operation speed and unlimited endurance (Slonczewski 1996; Berger 1978, 1996; Tsoi et al 1998; Myers et al 1999; Kiselev et al 2003; Tserkovnyak et al 2005; Albert et al 2000). Abstract We investigate spin transfer torque switching in an in-plane double-barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. The dependence of switching time on the thicknesses of free layer and spacer and coupling strength is explored.
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