Abstract
We report micro-machining of resists on silicon by proton beam writing (PBW) at Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA Takasaki, Japan. We studied the proton beam irradiation effects on typical positive and negative resists such as PMMA and SU-8, respectively, for application of the PBW technique to micro-machining. These resist materials were subjected to the scanning of a focused beam of protons accelerated using the microbeam facility of TIARA. Diameter of the proton beam was focused to about 1 μm. The fluence was varied to examine the irradiation effects on these resists as a function of the beam current and irradiation time. After exposure to proton beam, samples were developed and evaluated by a scanning electron microscope. Attempts to fabricate nickel stamps were also made by electroplating on the structures formed by PBW for application to imprint lithography.
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