Abstract
InP based tunable optical MEMS devices, such as Fabry-Perot filters, VCSELs, photodiodes, consist of two distributed Bragg reflectors (DBRs) and a cavity. Tuning of the filter wavelength is achieved by electrostatic actuation of the two DBRs which are p-doped and n-doped, respectively, and reversely biased. The cavity and the DBRs consist of a stress compensated InP/airgap structure which is fabricated by sacrificial layer removal, using FeCl3 wet etching of InGaAs layers. In this work we investigated the influence of p-and n-type conductivity on the etching process. We observed that the sacrificial layer etch rate of n-InGaAs is 7 times slower than the p-InGaAs. This influences the stress in the n-DBR section of the tunable device. Based on these results novel wavelength tunable optical devices with multiple InP membrane/airgap structures will be designed.
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